| PART |
Description |
Maker |
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
| GLT5640AL16P-5.5TC GLT5640AL16P-6TC GLT5640AL16P-7 |
TUBE, SHR, POL, 063/031, BLK, 017, 600V, 135C, (934872) 4米16个CMOS同步动态随机存储器
TUBING SHRINK BLK IRRAD-PFIN 1/16 ID
HEAT SHRINK TUBING, 2.4MM POLYOLEFIN, BLACK
TBG H/SHRINK FP 1/16 BLK
HEAT SHRINK TUBING 1/8 IN
SHRINK TUBING D=12
TUBING, HEAT SHRINK, 0.187 ID UL224 BLK
SHRINK TUBING, .093X..046IDX.020, BLK
4M X 16 CMOS Synchronous Dynamic RAM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| K4H560438E-ULAA K4H560838E-ULAA K4H560438E-UCAA K4 |
256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYS64V1622 HYS64V8200GDL-8 HYS64V16220GDL HYS64V16 |
144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块
Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 100uF; Voltage: 35V; Case Size: 10x12.5 mm; Packaging: Bulk
128MB PC133 (3-3-3) 2-bank End-of-Life
SDRAM Modules - 128MB PC133 (3-3-3) 2-bank End-of-Life
|
INFINEON[Infineon Technologies AG]
|
| V54C3256164VALT6 V54C3256804VAT V54C3256404VAT V54 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 56Mbit SDRAM.3伏，第二的TSOP /系统芯片的BGA / WBGA包装16米x 162 × 84米4
|
Mosel Vitelic, Corp.
|
| HY57V281620HCT-HI HY57V281620HCLT-8I |
SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC
From old datasheet system
SDRAM,4X2MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
| M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5DU281622DLT HY5DU281622DLT-X HY5DU281622DT HY5D |
DDR SDRAM - 128Mb
128MB-S DDR SDRAM
|
Hynix Semiconductor
|
| EM488M1644VBA-75F |
128Mb Mobile SDRAM
|
http://
ETC[ETC]
|
| HYM72V16M656LTU6-8 HYM72V16M656LTU6-P HYM72V16M656 |
SDRAM - SO DIMM 128MB
|
Hynix Semiconductor
|
